METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A method of manufacturing a semiconductor device comprises providing on a semiconductor substrate a mask pattern having a fully opened region and a partially opened region. Impurities are selectively introduced into an impurity introduction region of the semiconductor substrate through the fully opened region and the partially opened region of the mask pattern to form areas having high and low impurity densities in the impurity introduction region.