发明名称 |
Semiconductor device with capacitor electrodes and method of manufacturing thereof |
摘要 |
A semiconductor device and a method of manufacturing thereof can be gained wherein the occurrence of defects can be prevented and it is possible to reduce the manufacturing cost. The semiconductor device includes a capacitor electrode, an insulating layer and a wiring layer. The capacitor electrode is formed on the semiconductor substrate. The insulating film which is formed on the capacitor electrode has a trench which exposes part of the capacitor electrode and has an upper surface. The wiring layer fills in the inside of the trench, has an upper surface and is connected with the capacitor electrode. The upper surface of the wiring layer is located on approximately the same plane as the upper surface of the insulating film.
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申请公布号 |
US2002017673(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010903735 |
申请日期 |
2001.07.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAEDA HIROSHI;OASHI TOSHIYUKI;UEHARA TAKASHI |
分类号 |
H01L21/3205;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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