发明名称 Semiconductor memory device
摘要 The semiconductor memory device in accordance with the present invention allows evaluation of input/output terminal dependency of noise characteristic at the time of data output, it has a normal operation mode and a test mode, and includes a plurality of output buffers and selecting means for selectively activating at least one output buffer among the plurality of output buffers in the test mode.
申请公布号 US2002018383(A1) 申请公布日期 2002.02.14
申请号 US20010968899 申请日期 2001.10.03
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 AKAMATSU HIROSHI;HAYASHIKOSHI MASANORI
分类号 G11C7/00;G11C29/00;G11C29/14;(IPC1-7):G11C29/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址