| 摘要 |
<p>Layers of boron-doped silicon (36) having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near th etop (38) and bottom (40) surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers (36) are substantially balanced, thereby resulting in layers (36) with reduced out-of-plane curvature.</p> |
