Resist composition and method for manufacturing semiconductor device using the resist composition

摘要

A resist composition comprises: at least one type of a first compound having two or more intramolecular adamantyl structures represented by the chemical formula 1 below; a base resin; and a second compound which generates an acid by active beam irradiation. wherein X is -(OCO)m-(CH2)n-(COO)m-, where m = 0 or 1 and n = 0, 1, 2 or 3 provided when n = 0, m = 0; and Y and Z are H, OH, F, Cl, Br, R or COOR, where Y may be Z, or Y and Z may be introduced in a single adamantyl structure and R represents a straight or branched alkyl group having 1 to 8 carbon atoms.