发明名称 |
Method for depositing a fluorine-doped silica film |
摘要 |
The invention concerns a method comprising evaporating silicon and/or SiOx, wherein said evaporating is further defined as occurring in the presenceof oxygen if silicon or SiOx with x less than two is being evaporated, to form a silicon oxide film at the surface of a substrate and in bombarding said silicon film, while it is being formed, with a beam of positive ions derived from both a polyfluorocarbon compound and a rare gas. The invention is useful for producing low-index antiglare films. |
申请公布号 |
AU8409001(A) |
申请公布日期 |
2002.02.13 |
申请号 |
AU20010084090 |
申请日期 |
2001.07.31 |
申请人 |
ESSILOR INTERNATIONAL COMPAGNIE GENERALE D'OPTIQUE |
发明人 |
KARIN SCHERER;PASCALE LACAN;RICHARD BOSMANS |
分类号 |
G02B1/11;C23C14/06;C23C14/10;C23C14/22;C23C14/46;C23C14/48 |
主分类号 |
G02B1/11 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|