| 摘要 |
An integral dual frequency by-pass and transient suppressor device (10) has at least two ceramic semiconductor layers (11 and 31), the upper surfaces of which are formed with electrodes (12 and 13) of generally U-shaped configuration. The base portions (14 and 14a) of the electrodes are exposed at opposite surfaces of the semiconductor layers, the leg portions (15 and 16) of the U-shaped electrodes extending toward the base portions of electrodes of opposite polarity. The overlap (19) or registration area of one pair of legs (15 and 15a) differs from the overlap area (20) of the other leg pair (16 and 16a) with the result that two capacitors of different values are formed, the capacitors being in parallel and accordingly defining a low impedance path at two discrete frequencies. By varying the conductive paths as a function of the length of the electrode and/or the base of the U, a desired internal inductance is developed. Use of a semiconductor material in place of a dielectric provides transient energy suppression by shunting to ground any signal introduced to the device at a level at or above the breakdown voltage of the semiconductor. |
