| 摘要 |
When a nitride film is formed on a substrate containing at least metallic aluminum, a fluctuation in forming a nitride film can be prevented, or the formation of the nitride film can be accelerated. A substrate containing at least metallic aluminum is subjected to a heating treatment in vacuum of 10<-3> torrs or less, and subsequently it is subjected to a heating/nitriding treatment in an atmosphere (5) containing at least nitrogen. During the heating/nitriding treatment, porous bodies (3) and (4) through which nitrogen atoms-containing gases (A) and (B) can flow are contacted with the atmosphere (5). <IMAGE> |
