| 发明名称 |
Semiconductor device and method of manufacture |
| 摘要 |
In a semiconductor device which includes at least an interlayer insulating film containing a plurality of Si-H bonds, a Si-OH bond portion is removed from a surface of the interlayer insulating film. |
| 申请公布号 |
GB2329069(B) |
申请公布日期 |
2002.02.13 |
| 申请号 |
GB19980019141 |
申请日期 |
1998.09.02 |
| 申请人 |
* NEC CORPORATION |
发明人 |
TATSUYA * USAMI |
| 分类号 |
H01L21/3205;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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