发明名称 METHOD FOR PRODUCING SINGLE CRYSTAL AND PIEZOELECTRIC ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for producing a single crystal expressed by the composition formula, M3NbGa3Si2O14 (M is an alkali earth metal) and having a sufficient quality necessary for a piezoelectric material. SOLUTION: This method for producing the single crystal comprises bringing a crystal orientation plane inclined at an angle of 50.8-90 degrees from [001] axis of a seed crystal into contact with a melted liquid in a crucible, and pulling up to grow the single crystal expressed by the composition formula, M3NbGa3Si2 O14 (M is an alkali earth metal) at the lower end of the seed crystal. The obtained single crystal can suitably be used for the components of various piezoelectric elements such as a resonator and a filter.</p>
申请公布号 JP2002047099(A) 申请公布日期 2002.02.12
申请号 JP20010149533 申请日期 2001.05.18
申请人 TDK CORP 发明人 SATO JUN;KAWASAKI KATSUMI
分类号 C30B29/22;H01L41/18;H01L41/39;H01L41/41;(IPC1-7):C30B29/22;H01L41/24 主分类号 C30B29/22
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