| 摘要 |
A process for creating a dual damascene structure without needing an etch stop is disclosed. The process comprises the steps of: (a) providing a device substrate having a dielectric layer thereon; (b) forming a mask layer with a via pattern overlaying the dielectric layer; (c) forming a photoresist layer with a conductive line pattern aligned with said via pattern overlaying the mask layer; (d) etching part of the way through the dielectric layer using said mask layer as an etch mask, thereby transferring said via pattern into the upper half of the dielectric layer; (e) etching said mask layer and said dielectric layer using said photoresist layer as an etch mask, thereby transferring said conductive line pattern into the upper half of the dielectric layer to form a conductive line trench, and simultaneously transferring said via pattern in the upper half of the dielectric layer into the lower half of the dielectric layer to form a via opening; and (f) filling said conductive line trench and said via opening with a conductive material.
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