Method for reducing electromigration in semiconductor interconnect lines

摘要

A method for making a semiconductor chip includes disposing copper interconnects adjacent via channels and then doping only the portions of the interconnects that lie directly beneath the via channels. Then, the via channels are filled with electrically conductive material. The impurities with which the interconnects are locally doped reduce unwanted electromigration of copper atoms at the interconnect-via interfaces, while not unduly increasing line resistance in the interconnects.