| 摘要 |
The present invention relates to a method of forming a non-volatile memory device such as an EEPROM device. The non-volatile memory device is formed of an array of memory cells (10) organized into rows (20) and columns (22) within a semiconductor substrate (100). Each cell (10) comprises a gate structure (120) formed of a first dielectric layer (122), a floating gate (124), a second dielectric layer (126) and a control gate (128) formed in a well (50). The memory device further comprises insulating trenches (200) formed in said substrate (100) along a direction parallel to said columns (22) and isolating each cell (10) within a column (22) from other cells (10) within adjacent columns (22).
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