| 摘要 |
An electrode and capacitor structure, and methods of manufacture thereof, are disclosed for a semiconductor device. The capacitor includes a dielectric layer sandwiched between opposing first and second electrically conductive electrodes. At least one of the electrodes includes a tin, oxygen-annealed, refractory metal nitride barrier layer disposed adjacent the dielectric. Preferabaly, the barrier comprises two thin layers of seperately oxygen-annealed, refractory metal nitride. In particular methods of manufacturing the electrode and capacitor structures, a single process chamber is used for both fabrication of the barrier layer(s) and deposition of overlying metalization for the electrode. The barrier layer, in one particular embodiment, is formed from precursor gases of titanium nitride and exposure to an oxidizing gas such as oxygen, ozone or nitrous oxide.
|
