发明名称 |
Semiconductor device having an improved contact structure and a manufacturing method thereof |
摘要 |
There is described formation of a contact hole without involvement of damage to an etching stopper film and deterioration of electric characteristics, achieved by means of a self-alignment method. An interlayer oxide film is etched through an opening of a resist mask, and by means of plasma etching through use of a processing gas comprising a mixture of a rare gas and a CF-based gas, thereby tapering a shoulder of the silicon nitride film. Alternatively, a silicon oxide film and a silicon nitride film are continually etched through an opening of the resist mask, by means of plasma etching through use of a CH2F2 gas added to a mixed gas including a rare gas and a C4F8 gas.
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申请公布号 |
US6346482(B2) |
申请公布日期 |
2002.02.12 |
申请号 |
US19980176878 |
申请日期 |
1998.10.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUMOTO JUNKO;SAKAMORI SHIGENORI;TERATANI AKEMI;KUSUMI YOSHIHIRO;FUKAO TETSUHIRO;OHMI KAZUYUKI;TABARU KANJI;YAMANAKA NOBUAKI |
分类号 |
C09K13/08;H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/60;H01L21/768;(IPC1-7):H01L21/302;H01L21/306 |
主分类号 |
C09K13/08 |
代理机构 |
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代理人 |
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地址 |
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