| 摘要 |
In forming an interconnection having a structure in which an Al interconnection is covered with an interlayer insulating film, for the purpose of preventing voids to be created in the Al interconnection layer, together with suppressing the current leakage owing to the generation of etching residues, a multi-layered structure comprising a barrier layer, an Al interconnection metal layer, a Ti layer and an anti-reflection layer is formed on a semiconductor substrate having an insulating surface, and thereafter layers of said multi-layered structure are patterned, at least, down to the Ti layer into the shape of an interconnection pattern, and said patterned structure is heated so as to turn the Ti layer into an AlTi alloy layer and, then, the steps of growing an interlayer insulating film to bury said patterned interconnection, planarizing the interlayer insulating film and carrying out another heat treatment to degas the interlayer insulating film are performed.
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