发明名称 BI-POLAR SEMICONDUCTOR CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a bi-polar semiconductor circuit device capable of increasing an operation guaranteeing temperature range to a low temperature side. SOLUTION: When control part B2 for controlling the operation of a 3 transistor type current mirror circuit A2 constituted of NPN transistors 16, 17, and 18 is composed of an NPN transistor 15 and a resistance 14, the temperature characteristics of the currents of a current generating part C2 which supplies control currents to the resistance 14 are allowed to have characteristics inversely proportional to the temperature characteristics of the resistance 14, and proportional to the temperature characteristics of the inter-base/emitter voltages of the NPN transistors 16 and 17. Thus, it is possible to cancel the temperature characteristics of the resistance 14 and the inter-base/emitter voltages of the NPN transistors 16 and 17.
申请公布号 JP2002041161(A) 申请公布日期 2002.02.08
申请号 JP20000228229 申请日期 2000.07.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAIBARA RIE;SAWACHI TOSHIAKI
分类号 G05F3/26;H03F1/30;H03F3/343;(IPC1-7):G05F3/26 主分类号 G05F3/26
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