| 发明名称 |
METHOD FOR PROCESSING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a film wherein a silica film (interlayer insulating film) is hardly damaged in ashing a resist pattern. SOLUTION: The silica type film with a low dielectric constant formed on a substrate is etched using the resist pattern. Then the silica type film subsequent to the etching process is treated by a plasma induced by an inert gas such as a helium gas. Thus, the silica type film is not damaged in the post- process of ashing the resist pattern and the low dielectric constant can be maintained.
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| 申请公布号 |
JP2002043423(A) |
申请公布日期 |
2002.02.08 |
| 申请号 |
JP20000222723 |
申请日期 |
2000.07.24 |
| 申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
FUJII YASUSHI;MATSUSHITA ATSUSHI |
| 分类号 |
H01L21/302;H01B3/46;H01L21/027;H01L21/3065;H01L21/3105;H01L21/311;H01L21/312;H01L21/3205;H01L21/768;(IPC1-7):H01L21/768;H01L21/306;H01L21/320 |
主分类号 |
H01L21/302 |
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