| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD apparatus that can improve yield and productivity by suppressing generation of dust distributed in a band shape on a wafer. SOLUTION: Under a condition in which gas is supplied to the accommodating space of an inner tube 200 while heating with a heating means 400 is taken place so as to form a film on each wafer 1, the number of heat-insulating plates 500 is so designed (in this embodiment, 3 sheets) that the temperature in the vicinity of a gas inlet tube 600 and the temperature in the vicinity of a bottom wall member 140 are maintained at such a temperature range as not to generate adhesion of by-products in the gas inlet tube 600. As a consequence, generation of by-products and dust is prevented even though the inner tube 200, a boat 300, and the heat-insulating plates 500 are composed of SiC.
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