SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a constitution for a semiconductor storage device in which internal parameters are made adjustable in a nonvolatile manner from the outside without incurring the cost increase after the package is molded. SOLUTION: An internal parameter control signal generating unit generates internal parameter control signals R <0> to R <k> to adjust internal parameters of a semiconductor storage device. An internal parameter control signal generating unit 110-0 which generates the internal parameter control signal R <0> includes an antifuse element 90-0 formed by a data holding capacitor 85 of a memory cell. The element 90-0 is blown out in accordance with a parameter adjusting signal/BLW <0> and when a high voltage HVcc is applied, a dielectric film is broken and acts as a resistor element. The internal parameter control signal generating unit sets the signal level of the corresponding internal parameter control signals in accordance with the presence or the absence of blow input with respect to an antifuse element 90.