| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device equipped with a hydrogen diffusion preventing film, which is composed of an oxidized aluminium film, capable of effectively preventing the diffusion of hydrogen generated in a passivation process inside a capacitor, and a production method therefor. SOLUTION: The semiconductor with a capacitor is formed of an active area comprising a transistor and a first insulating film around the transistor; a capacitor structure formed on the first insulating film and comprising a lower electrode, a capacitor thin film on the lower electrode, and an upper electrode on the capacitor thin film; a second insulating film formed on the transistor and the capacitor structure; a metal wiring formed on the second insulating film and electrically connecting the transistor to the capacitor structure; and a hydrogen diffusion preventing film comprising aluminium oxide and formed on the metal wiring. |
