| 摘要 |
PROBLEM TO BE SOLVED: To obtain a P-type GaN based compound semiconductor in a GaN compound semiconductor element. SOLUTION: A method for manufacturing the GaN based compound semiconductor element comprises the steps of forming an N-type GaN compound semiconductor layer 12 on a substrate 10, and further forming a P-type impurity- deposed GaN based compound semiconductor layer 14. The method further comprises the steps of radiating an electromagnetic wave having a specific wavelength to the layer 14 doped with a P-type impurity, selectively vibrating a hydrogen bond, dissociating H, and activating it as an acceptor. |
