| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize a high switching speed and excellent high frequency characteristics even if a high density integrated structure is employed by reducing the resistances of the semiconductor layers and the contact resistance between the semiconductor layers and the metal electrodes, and to provide the manufacturing method of the semiconductor device. SOLUTION: In this semiconductor device, a surface of a 1st electrode 25E connected to a 1st region of a bipolar transistor 2 with the 1st region 20, a 2nd region 17B and a 3rd region 21 and the surface of the 2nd region 17B are silicidized, insulating side walls 32 are formed on the side parts of the 1st electrode 25E, and both the silicide layers 31 formed respectively on the 1st electrode 25E and the 2nd region 17B are brought into contact with the side walls 32. The manufacturing method of the semiconductor device includes a process in which the 2nd insulating film 32 is subjected to anisotropic etching to expose the surface of the 1st electrode 25E and the surface of the 2nd region 17B, and side walls are formed on the 1st electrode 25E; and a process in which, after a high melting point metal layer is formed over the whole surfaces, the surface of the 1st electrode 25E and the surface of the 2nd region 17E are silicidized by annealing.
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