| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having the ferroelectric capacitor of satisfactory characteristics suppressing deterioration caused by hydrogen reduction. SOLUTION: A first hydrogen barrier film 101, a lower electrode film 30, a ferroelectric film 4, an upper electrode film 50 and a second hydrogen barrier film 102 are successively deposited on a silicon substrate 1 through an insulating film 2, and an upper electrode 5 is patterned by successively etching the hydrogen barrier film 102 and the upper electrode film 50 while using a mask 103. A third hydrogen barrier film 104 is deposited while covering the exposed ferroelectric film 4 and while using a mask formed thereon, and the ferroelectric film 4 and a lower electrode 3 self-matched thereto are patterned by successively etching the ferroelectric film 4 and the lower electrode film 30.
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