| 摘要 |
PROBLEM TO BE SOLVED: To provide a row constituting of spare memory cells which is realized more simply and more effectively in a memory circuit, and to provide a circuit in which the occupied surface area is smaller than a conventional circuit having spare cells. SOLUTION: This dynamic memory circuit includes memory cells arranged in rows and columns, each row which can be started by a word line, each column fomed by cells connected to first and second bit lines, at least one spare row formed by static memory cells being coped so as to be started to replace a memory cell row, and each spare cell connected to the first and the second bit lines of a column of a circuit. |
