| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that a conventional photoelectric converter using crystalline semiconductor particles has a low conversion efficiency due to an irregularly connecting state of aluminum to silicon, a lack of reliability in a connecting state of a board to the particles or a damage of an n-type skin caused by a diffusion of aluminum in the skin at a thermally connecting time. SOLUTION: A method for manufacturing the photoelectric converter comprises the steps of arranging many p-type crystalline crystalline semiconductor particles on an aluminum substrate or a substrate in which an aluminum layer is formed on its surface, interposing an insulating substance between the many p-type crystalline semiconductor particles, and forming an n-type semiconductor region on an upper part of the p-type crystalline semiconductor particles. The method further comprises the steps of forming an alloy part of the aluminum and a semiconductor material in an interface between the aluminum layer and the p-type crystalline semiconductor particles, and forming a p+-type region at the p-type crystalline semiconductor particle side in the interface between the alloy part and the p-type crystalline semiconductor particles.</p> |
