发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit, capable of normal operations, immediately after a power source is turned on, without damaging degree of integration. SOLUTION: The collector of an NPN bipolar transistor Q1 is connected to a terminal P1, and the emitter thereof is connected to the positive pole of a reference voltage source 32; while the emitter of an NPN bipolar transistor Q2 is connected to the terminal P1, and the collector thereof is connected to the positive pole of the reference voltage source 32. The reference voltage source 32 applies a reference voltage VREF2 from the positive pole, and the negative pole thereof is grounded. A differentiating circuit, composed of a capacitor C1 and resistors R1 and R2, applies a base potential for turning on the NPN bipolar transistor Q1 and Q2 for a prescribed period (determined by the differentiating circuit) so as to apply the base potential of a ground level, after the lapse of a prescribed time.
申请公布号 JP2002043872(A) 申请公布日期 2002.02.08
申请号 JP20000225232 申请日期 2000.07.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKANO TOSHIYA
分类号 H01L21/8222;G05F1/10;G05F3/22;H01L27/06;H03F3/45;(IPC1-7):H03F3/45;H01L21/822 主分类号 H01L21/8222
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