| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction memory element having a fine, simple, and convenient structure that is advantageous to increase the degree of integration of the element and showing high-performance information writing and reading characteristics. SOLUTION: In this ferromagnetic tunnel junction memory element, a ferromagnetic central electrode that are connected to a gate electrode and a write electrode through insulations, are connected at both ends to a ferromagnetic source electrode and a ferromagnetic drain electrode through tunneling capacities. The ferromagnetic source, drain, and central electrodes are formed in the same plane. Writing is performed on the source and drain electrodes having the same direction of magnetization by inverting the direction of magnetization of the central electrode in parallel or antiparallel by conducting the write electrode, and reading is performed by the change in the source and drain electrodes of the magnetic resistance.
|
