| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a highly reliable semiconductor device, which can uniformly reduce Si-nodule for all contacts of a substrate and a wiring metal within a short cleaning period. SOLUTION: In the step 11, contact apertures are formed for connections with a wiring metal layer of the first layer to the Si-wafer. Next, in the step 12, the Si wafer is soaked into a cleaning liquid prepared in a cleaning tank (for example, RCA cleaning tank) for the cleaning with the ultrasonic-wave. With the effect of the ultrasonic-wave, a chemical liquid uniformly penetrates into all bottoms of fine contact apertures formed on the Si wafer. Thereafter, rinse cleaning and drying process are performed (steps 13, 14). With the cleaning of contact apertures just before the formation of wirings, an oxide film is almost uniformly formed as thin as about 1 nm on the surface of the bottom of the contact aperture. As a result, close contact is attained in the formation of the wirings in the step 15 and generation of Si-nodule can be controlled.
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