METHOD AND DEVICE FOR PLASMA PROCESSING

摘要

PROBLEM TO BE SOLVED: To prevent contaminant such as Cu stuck to the bevel part of a wafer from being stuck again to the surface of the wafer by a plasma when the wafer is fixed to a high frequency electrode for plasma processing such as dry etching. SOLUTION: Plasma processing is performed by installing the wafer 2 onto the high frequency electrode 1 of a plasma processor and fixing the wafer 2 so as to cover only the bevel part 2a without covering the surface of the wafer 2 with a ring 3. The part in contact with this wafer 2 of this ring has the same inclination as that of the part 2a of the wafer 2. Consequently, the contaminant 10 stuck to the part 2a is not spread to the surface in the middle of plasma processing and the plane part of the wafer 2 is entirely exposed, thereby the removing number of semiconductor device chips is not reduced.