| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching device, a seasoning method of this and a plasma etching method using these, for etching an object with etching gas applied with high frequency voltage. SOLUTION: In the plasma etching device which has an upper electrode arranged in an etching processing chamber, to which the etching gas is introduced, and a lower electrode opposing the upper electrode and mounting the processing object and etches the processing object by applying high frequency voltage to these electrodes, the upper electrode is formed of silicon carbide material.
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