| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method of exactly burying a metal, alloy, semiconductor, etc., in fine structure having a high aspect ratio (depth of fine holes or trenches)/inlet diameter or width of fine holes or trenches), especially holes or trenches, and crystallize a formed film. SOLUTION: A buffer gas is introduced to bury in and planarize a fine structure (typically holes or trenches) having a high aspect ratio at least at one time in the period of forming the film, using a technique (sputter, evaporation, ion planting, CVD, etc.), of forming a film in a vapor phase. The formed film or a film made by other apparatus is irradiated instantaneously with a high- density energy to crystallize the film and improve the electric performance thereof.
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