| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a bowing phenomenon occurring in a contact hole when using a BOE cleaning process, and also to prevent a bridge of metal lines when alternatively using an RF cleaning process. CONSTITUTION: The first PSG layer(33), a high density plasma oxide layer(34) and the second PSG layer(35) are sequentially deposited on a semiconductor substrate(31) having bit lines(32), thus forming interlayer dielectric. The contact hole is then formed by successively etching the layers(33,34,35). Next, the RF cleaning process is carried out, so that the second PSG layer(35) is further etched to form an upper incline sidewall of the contact hole. Then, after a contact plug(37) is formed in the contact hole, the second PSG layer(35) is removed and the metal lines(38) are formed thereon.
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