METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a TFT having required characteristics in a device having a plurality of TFTs arranged on a substrate. SOLUTION: In an active matrix type liquid crystal display, the circumferential circuit part employs a crystalline silicon film grown epitaxially in a direction parallel with the surface of a substrate and the pixel part employs a crystalline silicon film grown epitaxially in a direction perpendicular to the surface of the substrate. A TFT having a high mobility is formed in the circumferential circuit part and a TFT having a low OFF current is formed in the pixel part in order to enhance the charge holding rate.