| 摘要 |
PROBLEM TO BE SOLVED: To provide an IC package having a high-density I/O wherein an IC chip is bonded to a silicon intermediate interconnect substrate (IIS) and the IIS is wire-bonded to a printed wiring board(PWB). SOLUTION: This package comprises the PWB having wire-bonding pads on its upper surface, the semiconductor IIS, a means for die-bonding the lower surface of the IIS to the upper surface of the PWB, and a means for wire- bonding the wire-bonding pads on the IIS to the wire-bonding pad on the PWB. Further, the IIS comprises a semiconductor substrate having a center region on its upper surface, IIS interconnect sites on the center region of the upper surface of the semiconductor substrate, the IIS wire-bonding pads around the center region of the upper surface of the semiconductor substrate, and a metallized runner which interconnects the IIS interconnect sites with the IIS wire- bonding pads. |
