| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, for micronization while a good transistor characteristics is provided. SOLUTION: A semiconductor device 100 comprises a silicon substrate 10, a gate electrode 21 formed on the silicon substrate 10 through a gate insulating layer 16, first and second impurity diffusion layers 18 and 20 formed on the silicon substrate 10, and side wall insulating layers 15a and 15b formed on the side surface part of the gate electrode 21. Related to the gate electrode 21, its width becomes wider as it advances from a bottom surface to an upper surface.
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