发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS OPERATING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent a semiconductor element contained in a macro on the side lower in operation voltage from being broken, by outputting a signal from a macro which is supplied with high power voltage to perform burn-in to a macro which is supplied with low power voltage to perform burn-in, in a semiconductor integrated circuit which includes two macros where burn-in is performed while they are supplied with different power voltages. SOLUTION: This semiconductor integrated circuit possesses the first macro (1) which outputs data signals (Qj), and the second macros (2, 12, 22, and 32) into which the data signals (Qj) are inputted. The first macro (1) fixes the data signal (Qj) into the nonhigh level condition not on a high level, in answer to a control signal (BURN IN). The control signal (BURN IN) instructs that semiconductor integrated circuit to fix the data signal (Qj) into the above nonhigh level condition when burn-in is applied.
申请公布号 JP2002043518(A) 申请公布日期 2002.02.08
申请号 JP20000221782 申请日期 2000.07.24
申请人 NEC CORP 发明人 NARITAKE ISAO
分类号 G01R31/30;G01R31/28;G11C11/407;G11C11/4074;G11C29/12;H01L21/822;H01L27/04;(IPC1-7):H01L27/04 主分类号 G01R31/30
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