SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of efficiently preheating a wafer during loading of the wafer to a susceptor. SOLUTION: A single-wafer CVD apparatus 10 comprises a susceptor 40 for holding a wafer 1, a heating unit 27 that is positioned underneath the susceptor 40 and that heats the wafer 1 held on the susceptor 40, and a wafer elevator 50 that lifts up and down the wafer 1 placed on central part of the susceptor 40 against peripheral part of the susceptor 40 in a process chamber 11, wherein the heating unit 27 is brought close to the wafer 1 and to the susceptor 40 when the wafer elevator 50 lifts up the wafer 1 against the susceptor 40.