发明名称 METHOD FOR FORMING FERROELECTRIC FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To optimally control the orientational direction of crystal grains in a ferroelectric film in a semiconductor device having a ferroelectric capacitor. SOLUTION: A ferroelectric film is formed on lower side electrodes in the sealed environment shut out from the atmosphere. Moreover, the film is crystallized without bringing into touch with the atmosphere.
申请公布号 JP2002043310(A) 申请公布日期 2002.02.08
申请号 JP20000227598 申请日期 2000.07.27
申请人 FUJITSU LTD 发明人 TANI MARI
分类号 H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):H01L21/316 主分类号 H01L21/316
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