PROCESS FOR MANUFACTURING INTEGRATED CIRCUIT HAVING DUAL DAMASCENE STRUCTURE AND CAPACITOR

摘要

PROBLEM TO BE SOLVED: To provide a side-wall capacitor in an integrated circuit including a dual damascene structure. SOLUTION: A process for forming the dual damascene structure and the capacitor includes forming of a stack having an insulating layer and a stopping layer (steps 10-25). The stack is pattern-formed (step 30) so as to form an opening part which is used in order to form the side-wall capacitor (step 35) when a via or a groove of the dual damascene structure is formed. As a result, the process for manufacturing the side-wall capacitor can be integrated with the dual damascene process without adding a further mask or etching process.