发明名称 TEST APPARATUS FOR SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory test apparatus in which the defect relieving and analyzing time is shortened. SOLUTION: This semiconductor memory test apparatus for analyzing a defective memory cell of a DUT in a defect relieving and analyzing section and replacing as defective memory cell by a spare memory cell is provided with: a fail memory of an address fail memory for transferring the normal/ defective conditions of a plurality of bits existing in the same address as an address having a defective memory cell of the DUT to a fail buffer memory of the defect relieving and analyzing section with the prescribed format; and a fail buffer memory of the defect relieving and analyzing section for storing the prescribed format data.
申请公布号 JP2002042485(A) 申请公布日期 2002.02.08
申请号 JP20000227557 申请日期 2000.07.24
申请人 ADVANTEST CORP 发明人 MOTOHASHI JUN
分类号 G01R31/28;G11C29/00;G11C29/04;G11C29/10;G11C29/44;(IPC1-7):G11C29/00 主分类号 G01R31/28
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