发明名称 |
TEST APPARATUS FOR SEMICONDUCTOR MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory test apparatus in which the defect relieving and analyzing time is shortened. SOLUTION: This semiconductor memory test apparatus for analyzing a defective memory cell of a DUT in a defect relieving and analyzing section and replacing as defective memory cell by a spare memory cell is provided with: a fail memory of an address fail memory for transferring the normal/ defective conditions of a plurality of bits existing in the same address as an address having a defective memory cell of the DUT to a fail buffer memory of the defect relieving and analyzing section with the prescribed format; and a fail buffer memory of the defect relieving and analyzing section for storing the prescribed format data.
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申请公布号 |
JP2002042485(A) |
申请公布日期 |
2002.02.08 |
申请号 |
JP20000227557 |
申请日期 |
2000.07.24 |
申请人 |
ADVANTEST CORP |
发明人 |
MOTOHASHI JUN |
分类号 |
G01R31/28;G11C29/00;G11C29/04;G11C29/10;G11C29/44;(IPC1-7):G11C29/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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