FLASH MEMORY HAVING SIDEWALL FLOATING GATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A flash memory having a sidewall floating gate and a fabricating method thereof are provided to lower the height of the flash memory by forming a floating gate on a sidewall of a control gate. CONSTITUTION: A field oxide layer is formed on a semiconductor substrate(1). A control gate oxide layer(3c) is partially formed on the semiconductor substrate(1). A control gate(4) is formed on the control gate oxide layer(3c). An insulating layer(5) is formed on the control gate(4). A floating gate oxide layer(3d) is formed on the semiconductor substrate(1). A floating gate(6) is formed on the floating gate oxide layer(3d). A sidewall(7) is formed on a side portion of the floating gate(6). An LDD region(12) is formed within the semiconductor substrate(1). A source/drain region(13) is formed between the sidewall(7) and the field oxide layer.