| 发明名称 |
SEMICONDUCTOR WAFER AND METHOD FOR FORMING FILM THEREON |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a thin film with little uneven thickness on the semiconductor wafer on which a circuit pattern is formed. SOLUTION: A circuit pattern P1 of a semiconductor device is formed on the surface of a semiconductor wafer W with the circuit pattern formed on a region D1 provided for the semiconductor device out of the surface of the semiconductor wafer, and the same circuit pattern as the circuit pattern or another pattern P2 formed on the region D2 other than the region provided for the semiconductor device. A thin film is formed on the semiconductor wafer.</p> |
| 申请公布号 |
JP2002043237(A) |
申请公布日期 |
2002.02.08 |
| 申请号 |
JP20000230073 |
申请日期 |
2000.07.28 |
| 申请人 |
MITSUBISHI MATERIALS SILICON CORP;MITSUBISHI MATERIALS CORP |
发明人 |
SHIONO ICHIRO;MIZUSHIMA KAZUKI |
| 分类号 |
C23C14/14;C23C16/06;G03F1/00;G03F1/70;G03F7/213;H01L21/203;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C23C14/14 |
| 代理机构 |
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代理人 |
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