| 摘要 |
PROBLEM TO BE SOLVED: To control centering of transistor gate electric field, which is formed in an active region divided by element isolation, around the element isolation. SOLUTION: A groove is provided on a silicon substrate 1, and an oxide film 11 is formed on its inner wall. The groove is filled with an oxide film 7 interposing the oxide film 11. A gate oxide film 14 is formed on the silicon substrate 1. The bottom of a dent F2 which is formed by the gate oxide film 14 and the oxide films 11 and 7 is located closer to the oxide film 7, which fills the groove, than a border between the silicon substrate 1 and the oxide film 11.
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