| 摘要 |
PROBLEM TO BE SOLVED: To prevent a second insulating film from being abnormally etched in the vicinities of the edges of a second metal wiring layer at the time of a processing using an ion milling in the manufacturing method of a semiconductor device. SOLUTION: In the manufacturing method of a semiconductor device, before an Au layer 118 is formed, a photoresist layer 8 which covers the region other than the region of a second metal wiring layer 122 formed afterwards is formed on a second insulating film, and the layer 118 is formed on the layer 8 to perform an ion milling. Accordingly, as the second insulating film is protected with the layer 8 at the time of a processing using the ion milling, the second insulating film is never abnormally etched in the vicinities of the edges of the second metal wiring layer 122, a short-circuit between a first metal wiring layer 114 and the layer 122 is prevented from being generated, and the yield of the manufacture of the semiconductor device can be raised.
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