| 摘要 |
PROBLEM TO BE SOLVED: To realize a method and a device for variable area electron beam lithography which enables real-time detection of abnormality in data conversion. SOLUTION: A drawing pattern is divided in a data conversion processing circuit 14 based on drawing data, a cross sectional contour of electron beam is formed rectangular in accordance with a drawing pattern after division and the formed rectangular electron beam is projected to a desired position of a drawing material. In the process, an area of a drawing pattern before division is obtained in a first area calculation circuit 30, the total of an area of each output pattern after division is obtained in a second area calculation circuit 34 and the obtained two kinds of area are compared.
|
