COPPER-BASED LEAD MATERIAL FOR SEMICONDUCTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a copper-based lead material for a semiconductor and its manufacturing method difficult to produce warp even when flatness is high, etching processing and dimple processing are performed. SOLUTION: The manufacturing method of the lead material includes a first process for correcting the copper-based lead material for the semiconductor and a copper alloy plate-like material comprising the copper alloy plate-like body in which residual stress in the thickness direction of a cross section parallel to the extension direction of the copper alloy plate-like body is less than 10 N/mm2 and -30 N/mm2 or more in high elongation of 0.10% or more and a second process for correcting a correction material by using a multi-label at low tension of 29 N/mm2 or less.