发明名称 SURFACE LEVEL DETECTION METHOD
摘要 PROBLEM TO BE SOLVED: To carry out step measurement of a wafer, etc., under optimized conditions for obtaining correction information wherein a step of a wafer, etc., which is necessary during exposure, is corrected. SOLUTION: A plurality of parameters which are necessary for step measurement are defined in advance to a wafer whose surface condition shifts one after another passing through each process, and in steps S1 and S2, for example, it is judged whether step measurement is necessary or not to a set wafer by a parameter. In a step S4, the place of measurement shot for carrying out step measurement is judged. In a step S7, and a step S9, measurement shot is scanned and step measurement is carried out, thus obtaining correction information.
申请公布号 JP2002043217(A) 申请公布日期 2002.02.08
申请号 JP20000230499 申请日期 2000.07.31
申请人 NIKON CORP 发明人 OKITA SHINICHI;HAGIWARA TSUNEYUKI
分类号 G01B11/00;G03F7/207;H01L21/027;(IPC1-7):H01L21/027 主分类号 G01B11/00
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