| 摘要 |
PROBLEM TO BE SOLVED: To reduce the measurement error of a semiconductor Hall sensor caused by unbalanced voltages by suppressing the occurrence of the unbalanced voltage and, in addition, to improve the dielectric strength of the sensor by also suppressing the maximum electric field intensity in the sensor. SOLUTION: Notches 2a are provided at the inner corner sections of a cross- shaped semiconductor Hall sensor existing on the outer periphery of the pattern 1 of the sensor. Since the inner corner sections are not formed in right angle like the pattern of the conventional semiconductor Hall sensor, the electric field strength at the corner sections can be reduced.
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