| 摘要 |
PURPOSE: A method for fabricating an insulated gate bipolar transistor(IGBT) is provided to suppress a latch-up phenomenon and also to permit a high speed switching in a reverse channel structure. CONSTITUTION: After a highly doped p-type substrate(50) is formed, a thin buried oxide layer(60) is grown on the substrate, and then an n-type epitaxial layer(70) is formed thereon. One portion of the epitaxial layer(70) is implanted with p-type impurity, thereby forming a p-/p+ base region(80). The other portion is implanted with p-type impurity, forming a p+ ring(90). A part of the p-/p+ base region is then implanted with n-type impurity, forming an n+ region(100). The first gate electrode(G1) and a cathode electrode(K) are formed on the p-/p+ base region(80), and an anode electrode(A) is formed on the p+ ring(90). The second gate electrode(G2) is formed between the cathode electrode(K) and the anode electrode(A), acting as a p-channel gate capable of suppressing latch-up along with the p+ ring(90).
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